Characterization of a-CNx Thin Films Prepared by RF-PECVD Technique for Humidity Sensor
نویسندگان
چکیده
منابع مشابه
Synthesis and characterization of a-CNx thin films prepared by laser ablation
Amorphous carbon nitride (a-CNx) thin films were synthesized by laser ablation on silicon (100) and glass substrates. The plasma was produced using the fundamental line of a Nd:YAG laser with 28 ns pulse duration focused on a graphite target. Deposition of a-CN films was carried out in a nitrogen atmosphere in the range of pressures from 3 x 10 to 1.5 x 10 Torr. The laser fluences used in this ...
متن کاملCharacterization of Pure and Antimony Doped SnO2 Thin Films Prepared by the Sol-Gel Technique
Pure and antimony doped SnO2 thin films have been prepared by the sol-gel dip coating technique on glass substrate using starting material SnCl2.2H2O as a host and SbCl3 as a dopant. Our experimental results revealed that, the quality of the coated films on the glass depends on process parameters. The effect of annealing temperature, dipping numbe...
متن کاملDeposition and characterization of silicon carbon nitride films prepared by RF-PECVD with capacitive coupling
The goals of this work were to synthesize stoichiometric silicon carbon nitride (Si1.5C1.5N4) films using the RF-PECVD method and to characterize the deposited material. Gas mixtures, as opposed to an organic monomer, were chosen for reactants. Gas mixtures allow for varying the concentration of the elements needed for silicon carbon nitride synthesis and thereby optimizing the composition of t...
متن کاملcharacterization of pure and antimony doped sno2 thin films prepared by the sol-gel technique
pure and antimony doped sno2 thin films have been prepared by the sol-gel dip coating technique on glass substrate using starting material sncl2.2h2o as a host and sbcl3 as a dopant. our experimental results revealed that, the quality of the coated films on the glass depends on process parameters. the effect of annealing temperature, dipping numbers and the dopant concentration on the structura...
متن کاملXRD Characterization of AlN Thin Films Prepared by Reactive RF-Sputter Deposition
AlN thin films have been grown on R((1-12) surface-cut)-Al2O3, SiO2-glass and C((001) surface-cut)-Al2O3 substrates, by using a reactive-RF-sputter-deposition method. X-ray diffraction (XRD) shows that AlN film has (110) orientation of wurtzite crystal structure for R-Al2O3 and (001) orientation for SiO2-glass and C-Al2O3 substrates. The film thickness was analyzed by Rutherford backscattering ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Sains Malaysiana
سال: 2017
ISSN: 0126-6039
DOI: 10.17576/jsm-2017-4603-20